Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept

This paper investigates the short channel effects (SCE) of recently proposed Singular Point Source MOS (S-MOS) SiC MOSFET. The study was carried out using 2D and 3D TCAD simulations for a planar, trench S-MOS 1200V MOSFETs IV output characteristics up to under circuit transient conditions. device shows no SCE rated voltage when compared reference planar devices which exhibit strong SCE. is due appropriate P++ protection N++ source electric field shielding narrow mesa dimensions between orthogonal trenches where located.